ST has launched its fourth-generation STPOWER SiC MOSFETs, offering smaller size and greater efficiency for future EV traction inverters. Set to be available in 750-V and 1200-V classes, these devices ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

MOSFET is a powerful semiconductor that is employed as an electrical component to control loads as necessary. In addition to replacing bipolar junction transistors (BJTs) at a low cost, it also offers ...

A range of four H-bridge MOSFET packages aims to simplify DC fan and CCFL inverter circuits by reducing both component count and PCB size in space-constrained ...