A simple plasma-based edge termination approach yields 10 kV-class GaN diodes with a lateral geometry.
Combining GaN transistors with silicon-based digital circuits enables complex computing functions built directly into power ...
Power electronics in the Industry 4.0 era are evolving to deliver higher efficiency and power density and simplify power design.
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30-nm embedded memory could speed AI chips by cutting data shuttling
Most of the energy an AI chip burns never goes toward actual computation. It goes toward moving data: shuttling model weights ...
The transistor is one of the most important components in electronics. By switching or amplifying electrical signals, transistors make sure that our ...
The transistor is one of the most important components in electronics. By switching or amplifying electrical signals, transistors make sure that our smartphones, computers and even coffee machines do ...
GENEVA, SWITZERLAND, April 1, 2026 /EINPresswire.com/ — STMicroelectronics has announced two new high-speed half-bridge gate drivers that bring gallium-nitride (GaN ...
Volume production has commenced for Efficient Power Conversion’s (EPC) EPC2366, the first of its seventh-generation (Gen 7) eGaN family of power transistors. Devices produced on the new process ...
Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While the wide-bandgap material can certainly improve a system’s overall ...
Abstract: Increasing requirements for high switching frequency and high power density have driven the development of Gallium Nitride power transistors. Among them, some GaN transistors feature a ...
Toyota says its NACS shift is a full charging experience upgrade, with Supercharger access, app based payment, and heavily tested adapters. Toyota’s NACS integration prioritizes seamless charging ...
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